Title:
AMORPHOUS SILICON SOLAR BATTERY
Document Type and Number:
Japanese Patent JPS58209167
Kind Code:
A
Abstract:
PURPOSE:To facilitate the taking out of lead while reducing contact resistance by a method wherein, when the first electrode of transparent conductive film, amorphous Si layer, and ohmic second electrode are provided on a transparent substrate to produce a solar battery, the second electrode is formed into a double layer construction comprising Ni layer and Mo, Ti, W, Ta etc. located under the Ni layer. CONSTITUTION:A transparent insulated substrate 21 such as glass etc. wherein light enters is coated with the first electrode 22 comprising a transparent conductive film and then an amorphous Si layer 23 made of PIN is formed on the first electrode 22. Next an ohmic second electrode is to be provided on the amorphous Si layer 23, however said layer 23 is firstly coated with a layer 25 comprising such metals as Mo, Ti, W, Ta etc. around 500Angstrom thick as a primer layer and then an Ni layer 24 exceeding 5,000Angstrom thick is provided on the layer 25 as the second electrode. Through these procedures, the taking out of the lead from this electrode 24 may be facilitated with the ohmic property remarkably improved while reducing the contact reistance since there is the layer 25 comprising Mo, etc. between the Si layer 23 and the Ni layer 24.
Inventors:
HATAYAMA TAMOTSU
NOZAKI HIDETOSHI
KAMIMURA TAKAAKI
UTAGAWA TADASHI
KATOU CHIHARU
NOZAKI HIDETOSHI
KAMIMURA TAKAAKI
UTAGAWA TADASHI
KATOU CHIHARU
Application Number:
JP9118082A
Publication Date:
December 06, 1983
Filing Date:
May 31, 1982
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L31/04; H01L31/0224; (IPC1-7): H01L31/04
Attorney, Agent or Firm:
Noriyuki Noriyuki