Title:
ANISOTROPY ETCHING DEVICE
Document Type and Number:
Japanese Patent JP3509555
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an anisotropy etching device that can stabilize the anisotropy etching of the surface of a semiconductor wafer, and at the same time, reduce the number of μ pyramids being generated on the etching surface of the semiconductor wafer.
SOLUTION: A surface inside the tank of a ceiling board 12a of a lid body 12 is slanted, and the falling position of a droplet is allowed to deviate from the anisotropy etching liquid surface part of the upper part of a silicon wafer W. As a result, the frequent occurrence of a μ pyramid on a wafer etching surface can be suppressed. In addition, the evaporation constituent of IPA is subjected to droplet and is returned to an IPA rich layer (a), thus reducing the composition change of anisotropy etching liquid and at the same time, risk where the temperature of the liquid becomes low, and hence simultaneously stabilizing the anisotropy etching liquid of the silicon wafer W on anisotropy etching.
Inventors:
Hiroyuki OI.
Application Number:
JP15032798A
Publication Date:
March 22, 2004
Filing Date:
May 29, 1998
Export Citation:
Assignee:
MITSUBISHI MATERIALS SILICON CORP
International Classes:
H01L21/306; (IPC1-7): H01L21/306
Attorney, Agent or Firm:
安倍 逸郎
Previous Patent: EXECUTION STRUCTURE OF OUTER WALL MATERIAL
Next Patent: METHOD AND APPARATUS FOR PRODUCING SINGLE CRYSTAL
Next Patent: METHOD AND APPARATUS FOR PRODUCING SINGLE CRYSTAL