Title:
METHOD AND APPARATUS FOR PRODUCING SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JP3509556
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a single crystal of a compound semiconductor by a vertical Bridgman method capable of improving the concave of a solid-liquid surface and obtaining a stable single crystal growth yield.
SOLUTION: A part 63 for radiating the heat of a crucible 7 toward the outside in the radius direction is made at a part in the peripheral direction of a heater part 6a for controlling at least a solid-liquid interface among heaters 6 for surrounding the crucible 7. The heat current of the crucible 7 is radiated not only in the vertical direction but also outward in the radius direction and a semiconductor melt is gradually solidified from below upward in the crucible while maintaining a solid-liquid interface shape in a saddle shape to grow a single crystal.
Inventors:
Mizuniwa, Seiji
Itani, Masaya
Wachi, Michinori
Itani, Masaya
Wachi, Michinori
Application Number:
JP15401498A
Publication Date:
March 22, 2004
Filing Date:
June 03, 1998
Export Citation:
Assignee:
HITACHI CABLE LTD
International Classes:
C30B11/00; C30B29/42; H01L21/208; (IPC1-7): C30B11/00; C30B29/42
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