Title:
ANTIOXIDATION AND DRY ETCHING METHOD
Document Type and Number:
Japanese Patent JP3348454
Kind Code:
B2
Abstract:
PURPOSE: To improve the reliability of wiring formed by a film consisting of copper material by dry etching by preventing the film consisting of copper material from being oxidized from the formation of the film consisting of the copper material to that of an etching mask.
CONSTITUTION: A film 21 consisting of copper material is formed on a substrate 11, the surface of the film 21 is covered with an organic film 22 which does not cause oxygen and water to pass, and an etching mask 23 is formed on the organic film 22. Also, the film 21 consisting of the copper material is formed, the etching mask is formed on the film 21, and furthermore at least the surface where the film 21 consisting of the copper material is exposed is covered with the organic film. Then, a gas consisting of at least either hydrogen or nitrogen or both of them or a gas which is obtained by mixing rare gas to the above gas is used as the etching gas for etching the organic film. After that, the film 21 consisting of the copper material is etched.
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Inventors:
Keiji Shinohara
Application Number:
JP4213693A
Publication Date:
November 20, 2002
Filing Date:
February 05, 1993
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L21/302; H01L21/3065; H01L21/768; H01L23/522; (IPC1-7): H01L21/3065; H01L21/768
Domestic Patent References:
| JP445534A | ||||
| JP4273442A | ||||
| JP282620A | ||||
| JP61191034A | ||||
| JP5750434A |
Attorney, Agent or Firm:
Kuninori Funabashi