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Title:
APPARATUS FOR DEPOSITING AND PLANARIZING THIN FILM OF SEMICONDUCTOR WAFER
Document Type and Number:
Japanese Patent JP2010216015
Kind Code:
A
Abstract:

To provide an apparatus and a method relating to deposition and planarization of a semiconductor wafer, more particularly, for more effectively depositing a thin film using a localized deposition and for enabling localized planarization.

A proximity head 102 that can be charged as an anode is placed in close proximity to the surface of a wafer 104. A plating fluid is provided between the wafer and the proximity head to create localized metallic plating. While the proximity head proceeds in a direction 120 across the wafer, a deposited layer 108 is formed over a seed layer 106. The deposited layer is formed by way of an electrochemical reaction facilitated by an electrolyte 110 contained in a meniscus 116 that is defined between the proximity head and the seed layer.


Inventors:
RAVKIN MIKE
BOYD JOHN
DORDI YEZDI N
REDEKER FRED C
DE LARIOS JOHN M
Application Number:
JP2010066565A
Publication Date:
September 30, 2010
Filing Date:
March 23, 2010
Export Citation:
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Assignee:
LAM RES CORP
International Classes:
C25D7/12; C25D5/02; C25D5/04; C25D5/22; C25D17/12; C25D21/00; H01L21/00; H01L21/288; H01L21/3205
Domestic Patent References:
JP2003516471A2003-05-13
JP2003520291A2003-07-02
JP2003133316A2003-05-09
JP2004149926A2004-05-27
Foreign References:
WO1999065071A11999-12-16
Attorney, Agent or Firm:
Meisei International Patent Office



 
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