To provide an apparatus for detecting defects in a device, capable of detecting an arbitrary part of 2.0-2.5 mm square at abort 20-30 nm image resolution, without having to move a sample from the viewpoint of high operability, in inspection of defects in a device.
For realizing inspection at 2.0-2.5 mm image visual field with 20-30 nm image resolution of an SIM image, a beam-irradiating energy of an FIB device is set to 25-50 keV, and the maximum distance between a beam deflection support point and a sample 5 is set to a range of 60-120 mm. Furthermore, a conductive probe means using mechanism contact is used to supply electric charges, so that an electrically divided wiring in a device chip has a voltage different from that of an electrically grounded substrate.
KOIKE HIDEMI
SUGIMOTO ARITOSHI
