To provide an apparatus for forming a silicon melt which can form a silicon melt by surely melting a solid silicon raw material by electromagnetic induction and can be adopted to a single crystal growth by a CCZ method (Continuous charge Czochralski method).
The apparatus 20 for forming the silicon melt includes: an induction heating coil 22 surrounding a lower portion of a quartz vessel 21; and first and second cylindrical bodies 23A, 23B made of carbon which are arranged between the quartz vessel 21 and the induction heating coil 22. Thereby, the first and second cylindrical bodies 23A, 23B generate heat by electromagnetic induction from the induction heating coil 22 and heat the solid silicon raw material 29 in the quartz vessel 21. In the heated solid silicon raw material 29, the specific resistance is reduced, an eddy current is effectively generated by the electromagnetic induction, and heat is generated. Accordingly, the solid silicon raw material 29 is melted.
OCHIAI TAKASHI
NISHIMOTO MANABU
ONO TOSHIAKI
FUJIWARA TOSHIYUKI
| JPH06271381A | 1994-09-27 | |||
| JPH11304791A | 1999-11-05 | |||
| JPH11255592A | 1999-09-21 | |||
| JP2008162834A | 2008-07-17 | |||
| JP2008503427A | 2008-02-07 | |||
| JPH05105576A | 1993-04-27 | |||
| JPH06271381A | 1994-09-27 | |||
| JPH11304791A | 1999-11-05 |