To provide a plasma processing apparatus and a plasma processing method, that can decrease the number of conductance controllers controlling an introduction amount of process gas.
The plasma processing apparatus includes: a processing container capable of maintaining an atmosphere reduced in pressure below atmospheric pressure; a pressure reducing unit which reduces the pressure in the processing container down to a predetermined pressure; a mounting portion provided in the processing container and mounted with a workpiece; a plasma generation portion which generates plasma in the processing container; a gas supply portion which supplies the process gas into the processing container; a first piping having one end connected to the gas supply portion; a branch portion connected to the other end of the first piping; a plurality of pieces of piping each having one end connected to the branch portion and the another end connected to the processing container, and differing in flow-passage conductance of the piping from one another; and the conductance controller provided to the first piping and controlling the conductance of a flow passage of the first piping.
Hiroshi Ichikawa
Soichi Homma
Yukinobu Hibino
Next Patent: OPTICAL RECEIVER DEVICE