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Title:
THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE THIN-FILM TRANSISTOR, AND DISPLAY DEVICE
Document Type and Number:
Japanese Patent JP2011187506
Kind Code:
A
Abstract:

To provide a thin-film transistor and a method of manufacturing the transistor capable of obtaining uniform and excelling electrical characteristics and also reducing steps by a simple structure, and to provide a display device.

An oxide semiconductor film 40 is made as a laminated structure of an amorphous film 41 and a crystallized film 42, wherein high uniformity electrical characteristics are obtained by the amorphous film 41. A source electrode 50S and a drain electrode 50D are provided, in contact with the crystallized film 42, thereby preventing the oxide semiconductor film 40 from being etched, when etching the source electrode 50S and the drain electrode 50D during a manufacturing process. This improves a wet etching selection ratio of the source electrode 50S and the drain electrode 50D for the oxide semiconductor film 40 when a channel etch type is applied, and the manufacturing steps can be reduced by the application of a simple channel etch type structure.


Inventors:
MOROSAWA NARIHIRO
FUJIMORI TAKANARI
ARAI TOSHIAKI
Application Number:
JP2010048306A
Publication Date:
September 22, 2011
Filing Date:
March 04, 2010
Export Citation:
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Assignee:
SONY CORP
International Classes:
H01L29/786; H01L21/20; H01L21/336
Domestic Patent References:
JP2009099887A2009-05-07
JP2002313721A2002-10-25
JP2007250983A2007-09-27
Foreign References:
WO2009034953A12009-03-19
WO2009075281A12009-06-18
Attorney, Agent or Firm:
Yoichiro Fujishima
Yasushi Santanzaki
Masao Hasebe
Takaaki Tanaami



 
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