APPARATUS FOR PRODUCING SINGLE CRYSTAL OF COMPOUND SEMICONDUCTOR AND PRODUCTION USING THIS APPARATUS

Japanese Patent JP3391598

B2

PURPOSE: To suppress the outflow rate of a dissociation component out of a hermetic vessel provided with a stop valve means by communicating the inside of a chamber enclosing this hermetic vessel with outside in a section apart from a heating means.
CONSTITUTION: The hermetic vessel 15 housing a crucible 14 in which a compd. semiconductor raw material and sealant 27 are packed is placed on a supporting table 13 in a high-pressure vessel 1 and is closed with a lower cap 7. Next, the inside of the vessel 1 is evacuated to a vacuum through a gas supply and discharge path 12 and, thereafter, an inert gas is supplied into the vessel 1. Next, electric power is turned on to the heater 3 for heating to melt the sealant 27 and to seal the stop valve means 30. Further, the heating is continued and the pressure of the inert gas in the vessel 15 is increased to the dissociation pressure of the compd. semiconductor or above. The compd. semiconductor raw material in the vessel 15 is heated to melt by maintaining the region of a vent opening 16 at a low temp. below the m. p. of the high dissociation pressure component. The melt in the vessel 15 is cooled from one end side to the other end side to allow the single crystal to grow.

Takao Fujikawa
Kazuhiro Uehara
Yoshihiko Sakashita
Kazuya Suzuki
Hiroshi Okada
Takeho Kawanaka
Seiichiro Ohmoto

JP7186295A

March 31, 2003

March 29, 1995

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KABUSHIKI KAISHA KOBE SEIKO SHO

C30B11/00; H01L21/208; (IPC1-7): C30B11/00; H01L21/208

JP4187587A
JP770276A
JP3247582A
JP63274684A
JP60251192A
JP58500020A

Toshio Yasuda

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