To provide an aqueous dispersant for chemical mechanical polishing which can efficiently remove a cap layer by polishing, and at the same time, with which a chemical mechanical polishing process that is reduced in damages given to the material of an underlying insulating layer having a low dielectric constant can be performed, and to provide a method for chemical mechanical polishing which uses the aqueous dispersant.
The aqueous dispersant for chemical mechanical polishing contains (A1) first fumed silica, having a specific surface area of ≥10 m2/g and <160 m2/g and a mean secondary particle diameter of 170-250 nm and (A2) second fumed silica, having a specific surface area of ≥160 m2/g and a mean secondary particle diameter of ≥50 nm and <170 nm and has a pH of 3-12. In the method for chemical mechanical polishing, the object to be polished, having a metallic layer and a specified insulating layer, is chemically and mechanically polished by using the aqueous dispersant for chemical mechanical polishing.
SHIDA HIROTAKA
KUBOTA KIYONOBU
HATTORI MASAYUKI
KAWAHASHI NOBUO
JP2001288455A | 2001-10-16 | |||
JP2001072962A | 2001-03-21 | |||
JP2001187880A | 2001-07-10 | |||
JP2002190458A | 2002-07-05 |
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