ATOMIC LAYER DEPOSITION OF OXIDE FILM

Title:

ATOMIC LAYER DEPOSITION OF OXIDE FILM

Document Type and Number:

Japanese Patent JP2004256916

Kind Code:

A

Abstract:

To remarkably simplify a depositing method by eliminating an oxidizing agent process and further to improve the quality of a nanolaminate film.

An atomic layer deposition method for depositing an oxide thin film is provided. In the method, hafnium oxide is formed by using a nitrate ligand of a first precursor as an oxidizing agent for a second precursor. The method is suitable for depositing a High-k hafnium oxide dielectric body used for a gate dielectric body or a capacitor dielectric body on the silicon surface subjected to hydrogen termination treatment by using a hafnium nitride precursor and a hafnium chloride precursor.

Inventors:

CONLEY JOHN F JR
YOSHI ONO
SOLANKI RAJENDRA

Application Number:

JP2004043728A

Publication Date:

September 16, 2004

Filing Date:

February 19, 2004

Export Citation:

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Assignee:

SHARP KK

International Classes:

C23C16/40; C23C16/02; C23C16/34; C23C16/52; C30B25/02; C30B25/14; H01L21/205; (IPC1-7): C23C16/40; C23C16/02; C23C16/34; C23C16/52

Attorney, Agent or Firm:

Hidesaku Yamamoto
Takaaki Yasumura
Takeshi Oshio

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