Title:
ATOMIC LAYER EPITAXIAL DEVICE
Document Type and Number:
Japanese Patent JPS58101419
Kind Code:
A
Abstract:
PURPOSE:To enable to form two or more kinds of atoms on one atomic layer by a method wherein a part whereon ions may soft-landing is provided on the surface of substrate by means of accelerating ions from ion sources at low voltage not exceeding the specified voltage. CONSTITUTION:The ion species 12 with 1 valence of electric charge are arranged on a substrate 11 at the same intervals without driven into said substrate 11 since they are accelerated by low voltage accelerating electrode 5 at the voltage not exceeding 500V. When the ions with 2 valences only are soft-landed on the surface of substrate with the mass analysing unit fixed to the shifting unit of ions, the ion species 22 are arranged on the substrate 21 at the intervals two times of the intervals of the ions with 1 valence. Now an atomic layer whereon Si ions and P ions are alternately arranged at the same intervals may be formed by means of forming Si<+> ions 32 with 2 valences on the substrate 31 and making P<+> ions 33 with 1 valence soft-landing on the substrate 31 after converting Si ions into Si<+> ions with 1 valence by radiating electronic ray. In these process it is possible to form one atomic layer containing two or more kind of atom.
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Inventors:
IWAMATSU SEIICHI
Application Number:
JP19979881A
Publication Date:
June 16, 1983
Filing Date:
December 11, 1981
Export Citation:
Assignee:
SUWA SEIKOSHA KK
International Classes:
H01L21/205; H01L21/203; H01L21/268; (IPC1-7): H01L21/26; H01L21/363
Attorney, Agent or Firm:
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