Title:
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3118084
Kind Code:
B2
Abstract:
PURPOSE: To equalize the height of each electrode by starting the formation of a bump electrode to one electrode and another electrode substantially at the same time and ending plating work when both bump electrodes have attained virtually the same height.
CONSTITUTION: For example, when silver plating is carried out with a substrate wafer 10 as a cathode and a silver electrode as an anode, a bump electrode 31 and a bump electrode 41 are formed on an anode thin film electrode 30 and a cathode thin film 40 respectively. In the early period of this silver plating growth, the surface of the anode bump electrode 31 is higher than that of the cathode bump electrode 41, but the growth speed of the cathode bump electrode 41 is higher than that of the anode bump electrode 31. Therefore, the surfaces of bump electrodes 31 and 41 are turned into the same plane in a specified time. When the surfaces of bump electrodes have become level, plating work is ended. It is, therefore, possible to equalize the height of the electrode 31 and the electrodes 31 and 41 of a semiconductor device.
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Inventors:
Yasuo Hasegawa
Hideo Yamaguchi
Hideo Yamaguchi
Application Number:
JP17604992A
Publication Date:
December 18, 2000
Filing Date:
June 10, 1992
Export Citation:
Assignee:
Origin Electric Co., Ltd.
International Classes:
H01L21/60; H01L21/321; H01L21/822; H01L27/04; (IPC1-7): H01L21/60; H01L21/822; H01L27/04
Domestic Patent References:
| JP5365661A | ||||
| JP1283896A | ||||
| JP289855U |
Attorney, Agent or Firm:
Shinichi Kawakubo