BARRIER FILM FOR THIN FILM TRANSISTOR AND TARGET MATERIAL FOR BARRIER FILM

Japanese Patent JP2021138990

A

To provide a barrier film for thin film transistors which does not remarkably increase resistance of a metal wiring, does not remarkably deteriorate semiconductor characteristics of a semiconductor layer, and is excellent in erosion resistance under high temperature and high humidity environment, and a barrier film target material for producing these.SOLUTION: A barrier film for thin film transistors has a composition represented by (Ti100-x-yAlxMoy)100-zNz. However, 35.0≤x≤60.0 at%, 10.0≤y≤35.0 at% and 0≤Z≤50.0 at%. A target material for the barrier films has a composition represented by (Ti100-x-yAlxMoy)100-zNz, where 35.0≤x≤60.0 at%, 10.0≤y≤35.0 at% and 0≤Z≤50.0 at%.SELECTED DRAWING: Figure 2

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TOMINAGA SHOGO
TOTSUKA JUN
KAWASHIMA SHINGO

JP2020036340A

September 16, 2021

March 04, 2020

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DAIDO STEEL CO LTD

C22C14/00; C22C30/00; C22C21/00; C23C14/06; C23C14/14; C23C14/34; H01L21/28; H01L21/285; H01L21/336; H01L29/417; H01L29/786

Fumio Hatakeyama

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