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Title:
BARRIER METAL FILM MANUFACTURING APPARATUS AND METHOD THEREFOR
Document Type and Number:
Japanese Patent JP3801582
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To manufacture a barrier metal film which can satisfy the diffusion-proof property and close contact property.
SOLUTION: Gas plasma 19 of chlorine gas to which only a very small amount of nitrogen is mixed is generated by generating plasma within a chamber 1 accommodating a substrate 3, a precursor of tantalum chloride is generated in the gas phase by etching a material 11 to be etched of tantalum with chlorine radical, and the tantalum element of precursor is formed as a film on the substrate by lowering the temperature in the side of substrate 3 than that in the side of the material 11 to be etched. Accordingly, both diffusion-proof property and close contact property can be satisfied through disturbance of column type interface by coupling the nitrogen element to metal crystal of barrier metal.


Inventors:
Hitoshi Sakamoto
Application Number:
JP2003190210A
Publication Date:
July 26, 2006
Filing Date:
July 02, 2003
Export Citation:
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Assignee:
MITSUBISHI HEAVY INDUSTRIES,LTD.
International Classes:
C23C16/08; H01L21/285; C23C16/448; H01L21/28; (IPC1-7): H01L21/285; C23C16/08; C23C16/448; H01L21/28
Domestic Patent References:
JP2003147534A
JP2003166061A
JP9306870A
JP9219382A
JP2005209984A
Attorney, Agent or Firm:
Toshiro Mitsuishi
Tadahiro Mitsuishi
Yasuyuki Tanaka
Hiroshi Matsumoto