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Title:
BARRIER METAL, ITS FORMATION, GATE ELECTRODE, AND ITS FORMATION
Document Type and Number:
Japanese Patent JPH11195621
Kind Code:
A
Abstract:

To prevent oxygen atoms, etc., from being diffused into a copper film for wiring from an adjacent layer, by using WNx or WSiNx as the barrier metal of a semiconductor integrated circuit.

Lower-layer wiring 4 composed of a thin metallic copper film is formed on the surface of a substrate 2, such as the semiconductor wafer, etc., and the periphery of the wiring 4 is formed of an Sin2 insulating film 6. Then an SiO2 interlayer insulating film 8 is formed so as to cover the insulating film 6 and lower-layer wiring 4 and a via hole 10 is formed through the insulating film 8 so that part of the wiring 4 may be exposed. At the same time, a wiring groove 12 is formed above the via hole 10 and a thin barrier metal composed of WNx (tungsten nitride) or WSiNx (tungsten silicide nitride) is formed on the internal surfaces of the via hole 10 and the wiring groove 12.


Inventors:
MATSUSE KIMIHIRO
OTSUKI HAYASHI
Application Number:
JP20719898A
Publication Date:
July 21, 1999
Filing Date:
July 07, 1998
Export Citation:
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Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/28; H01L21/285; H01L21/3205; H01L21/768; H01L23/52; H01L23/532; H01L29/49; H01L29/78; (IPC1-7): H01L21/285; H01L21/285; H01L21/3205; H01L29/78
Domestic Patent References:
JPH09260306A1997-10-03
JPH08264531A1996-10-11
JPH01239971A1989-09-25
JPH07153716A1995-06-16
JPH07135186A1995-05-23
JPH05347274A1993-12-27
JPH07180058A1995-07-18
JPH09255687A1997-09-30
JPH0817762A1996-01-19
JPH09283463A1997-10-31
JPH08186173A1996-07-16
JPH08191070A1996-07-23
Attorney, Agent or Firm:
Akihiro Asai



 
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