Title:
MANUFACTURE OF SEMICONDUCTOR SUBSTRATE WITH INSULATING FILM FORMED BY USING LASER IRRADIATION
Document Type and Number:
Japanese Patent JPH11195624
Kind Code:
A
Abstract:
To provide a method of manufacturing a semiconductor substrate with an insulating film using a laser irradiation, which can cut dividedly the substrate in a lattice type, with good accuracy and at a quick speed.
Grooves 2 extending over from the end on one side of the ends of the surface of an Si substrate 1 to the other end of the substrate 1 are formed in at least one surface of the substrate 1 as slicing lines, an insulating film 3 covering the surface of this substrate is formed, CO2 laser beams L irradiated on this film 3 are made to extend along the grooves 2 to move the laser beams L, whereby cracks due to a thermal stress are developed in the directions of movement of these CO2 laser beams L to slice the substrate 1.
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Inventors:
IMOTO KATSUYUKI
SATO SHINOBU
OSONO KEIICHI
SATO SHINOBU
OSONO KEIICHI
Application Number:
JP36083697A
Publication Date:
July 21, 1999
Filing Date:
December 26, 1997
Export Citation:
Assignee:
HITACHI CABLE
International Classes:
B23K26/40; B23K26/38; H01L21/301; (IPC1-7): H01L21/301; B23K26/00
Attorney, Agent or Firm:
Nobuo Kinutani