Title:
BIPOLAR TYPE PHOTOTRANSISTOR
Document Type and Number:
Japanese Patent JP2764776
Kind Code:
B2
Abstract:
PURPOSE: To control stability and linearity of an output electric signal with respect to the quantity of light received in a semiconductor image sensor for converting an input light into an electric signal.
CONSTITUTION: A gate electrode 20 is provided on a surface of a vase of an emitter-base junction of a bipolar type phototransistor to be used for a semiconductor image sensor, the surface of the base is covered with dense impurity layer 30 of the same conductivity type as that of the base, the surface is covered with a silicon oxide film 6, hydrogen is enclosed in the oxide film, and the oxide film is covered with a silicon oxide film 7. Thus, a surface state of the phototransistor is stabilized, a collector current dependency of a DC current amplification factor is suppressed to obtain stability and linearity of photoelectric conversion characteristics.
Inventors:
KUHARA KENTARO
Application Number:
JP28308992A
Publication Date:
June 11, 1998
Filing Date:
October 21, 1992
Export Citation:
Assignee:
SEIKOO INSUTSURUMENTSU KK
International Classes:
H01L21/316; H01L21/318; H01L21/331; H01L23/29; H01L23/31; H01L29/73; H01L31/10; (IPC1-7): H01L31/10
Domestic Patent References:
| JP515920A | ||||
| JP59108372A | ||||
| JP3198345A | ||||
| JP63128665A | ||||
| JP642353A | ||||
| JP1102971A | ||||
| JP4304665A |
Attorney, Agent or Firm:
Keinosuke Hayashi