PURPOSE: To provide a cantilever incorporating a film type displacement sensor, which has a stable performance with no restriction to the manufacture thereof, by providing a buffer layer between a flexible plate and a lover electrode.

CONSTITUTION: A silicon nitride layer having a thickness of about 0.3μm is formed on a silicon substrate with the use of a CVD process. Next, a part of the silicon nitride layer is removed by reactive dry-etching so as to form a hole where a part which will be turned into a stylus (needle-like chip) after anisotropic etching with the use of potassium hydroxide. Further, silicon nitride is deposited with the use of a CVD process so as to increase the film thickness up to 0.5μm. Further, an aluminum oxide layer is formed over the silicon nitride layer. Then, a lower electrode pattern is formed by photolithography and sputtering. Further, with the use of the same process, a resist pattern is formed, and then, a part of the silicon nitride layer, other than those from which a lever and a substrate are formed, is removed by reactive dry etching. Further, a silicon part is removed so that the lever is formed. A PZT film having a thickness of 1.0μm is formed over the lever by sputtering, and finally, a platinum upper electrode (g) is formed.