PURPOSE: To Provide a cantilever which can exhibit a piezoelectric effect without polarization by forming a film serving as an aluminum group feroelectric intermediate layer on an upper electrode through crystallographic orientation.

CONSTITUTION: A flexible plate is formed of silicon dioxide, and an intermediate layer serving as a film type displacement sensor is formed of titanate zirconium chlorate. A window is formed in a part of a Si (111) film which is covered with a silicon oxide film having a thickness of 200mm by reactive dry-etching, and with the use of the window, a pit is formed by anisotropic etching with the use of potassium hydroxide, and is oxidized so as to obtain an silicon oxide stylus. A platinum lower electrode having a thickness of 50mm is formed thereover by photography, the platinum exhibiting (111) orientation following Si. A PZT having a thickness of 500nm is formed, exhibiting (111) orientation following the platinum. Finally, a gold film serving as an upper electrode is formed by evaporation, and then the silicon oxide film on the rear surface of the silicon wafer is removed by reactive dry etching. Then silicon is removed up to the silicon oxide film at the upper surface thereof by anisotropic etching, and then a glass block is made into press contact thereto.