To provide a capacitive element having an lower electrode of a three-dimensional configuration and a capacitive insulating film of a ferroelectric material, and a semiconductor memory using the capacitive element, which can avoid an adverse influence on the data holding performance of the capacitive element by preventing a deterioration in the polarization characteristic of the ferroelectric material by a simple method.
A capacitive element 22 has a lower electrode 19 of a three-dimensional configuration, an upper electrode 21 formed to be opposed to the lower electrode 19, and a capacitive insulating film 20 formed between the lower and upper electrodes 19 and 21 and made of a crystallized ferroelectric material. The capacitive insulating film 20 is set to have a thickness not smaller than 12.5 nm and not larger than 100 nm. When the ferroelectric material has a polycrystalline structure, the material are set to have crystalline grain diameters not smaller than 12.5 nm and not larger than 200 nm.
HAYASHI SHINICHIRO
Hiroshi Koyama
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Atsushi Fujita
Kazunari Ninomiya
Tomoo Harada
Iseki Katsumori