Title:
CAPACITY VARIABLE ELEMENT
Document Type and Number:
Japanese Patent JP3544839
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To easily form a capacity variable element on a ceramic substrate at low cost by a method, wherein a dielectric film is formed by partially substituting the titanium element of barium titanate of a dielectric thin film with zirconium, hafnium or both zirconium and hafnium, and the element capacity is changed by applying a voltage between a lower electrode and an upper electrode.
SOLUTION: A capacitance variable element is composed by successively forming a lower electrode 2, a dielectric thin film 3 and an upper electrode 5 mainly on a substrate 1. At this point, the dielectric thin film 3 is a thin film, in which the titanium element of barium titanate or barium/strontium titanate is partially replaced with hafnium or both of zirconium and hafnium. Specifically, the thin film is set as Ba(ZrxTi1-x)O3 (0.05≤x≤0.3). It is preferable that this dielectric thin film 3 be formed through sol-gel method.
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Inventors:
Ryusuke Kita
Yoshiyuki Masuda
Sakiko Sato
Noboru Otani
Yoshiyuki Masuda
Sakiko Sato
Noboru Otani
Application Number:
JP27914397A
Publication Date:
July 21, 2004
Filing Date:
October 13, 1997
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01G7/06; (IPC1-7): H01G7/06
Domestic Patent References:
| JP8306865A | ||||
| JP8157215A | ||||
| JP9069589A | ||||
| JP8273978A | ||||
| JP6342737A | ||||
| JP62030682B1 | ||||
| JP4019687B2 |
Attorney, Agent or Firm:
Shintaro Nogawa
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