Title:
CHARGED PARTICLE IMPLANTING DEVICE
Document Type and Number:
Japanese Patent JP2973269
Kind Code:
B2
Abstract:
PURPOSE: To flatten a profile of a charged particle beam so as to prevent generation of charge-up on a substrate such as a semiconductor wafer.
CONSTITUTION: A beam detecting probe 16 disposed in front of a substrate 14 can be disposed on a path of a beam 10, as necessary. In the case where a profile of the beam is found not to be flat as a result of detection by the probe, a magnetic field device 4 provided before the probe is controlled to change the beam into a flat profile. Since the probe is disposed in front of the substrate, most of beams can pass through the probe.
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Inventors:
MURAKAMI TOORU
TSUKIHARA MITSUKUNI
KABASAWA MITSUAKI
TSUKIHARA MITSUKUNI
KABASAWA MITSUAKI
Application Number:
JP29935593A
Publication Date:
November 08, 1999
Filing Date:
November 30, 1993
Export Citation:
Assignee:
SUMITOMO IITON NOBA KK
International Classes:
C23C14/48; H01J37/04; H01J37/317; H01L21/265; (IPC1-7): H01J37/317; H01J37/04; H01L21/265
Domestic Patent References:
| JP62243231A | ||||
| JP635293A |
Attorney, Agent or Firm:
Yosuke Goto (1 person outside)
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