CHEMICAL MECHANICAL POLISHING CONDITIONER - MITSUBISHI MATERIALS CORP

Title:

CHEMICAL MECHANICAL POLISHING CONDITIONER

Document Type and Number:

Japanese Patent JP2004306257

Kind Code:

A

Abstract:

To provide a CMP (chemical mechanical polishing) conditioner, improved in sharpness.

In this CMP conditioner, an abrasive grain layer 22 has a central area 24 and a peripheral area 26. In the central area 24, two or more projecting parts 28 are formed at spaces from each other, and two or more super-abrasive grains 14 are mounted on the projecting parts in a metallurgical bonding phase 23. In the peripheral area 26, the super-abrasive grains 14 are mounted in a metallurgical bonding phase 23. The projecting part 28 has a height from the abrasive grain layer bottom part 22a between the adjacent projecting parts 28 larger than the mean particle diameter of the super-abrasive grains 14, the number of super-abrasive grains 14 mounted on each projecting part 28 is 11 to 500, and the occupying percentage of super-abrasive grains 14 to the whole area of the abrasive grain layer 22 in a plan view is set in the range of 20% to 80%.

Inventors:

YAMASHITA TETSUJI
SHITAMAE NAOKI
HATA HANAKO

Application Number:

JP2004223670A

Publication Date:

November 04, 2004

Filing Date:

July 30, 2004

Export Citation:

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Assignee:

MITSUBISHI MATERIALS CORP

International Classes:

B24B53/12; B24B53/017; B24D3/00; B24D7/00; H01L21/304; (IPC1-7): B24B53/12; B24B37/00; B24D3/00; B24D7/00; H01L21/304

Attorney, Agent or Firm:

Masatake Shiga
Tadashi Takahashi
Masakazu Aoyama
Akihiko Eguchi
Yasuhiko Murayama
Noriko Yanai

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