Title:
シリコン含有前駆物質と原子酸素を用いた高品質流動状二酸化シリコンの化学気相堆積
Document Type and Number:
Japanese Patent JP2009539268
Kind Code:
A
Abstract:
Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.
Inventors:
Ingle, Nitin K.
Yuan, Tseng
Gee, Paul
Supreme, Kedah
Yuan, Tseng
Gee, Paul
Supreme, Kedah
Application Number:
JP2009513437A
Publication Date:
November 12, 2009
Filing Date:
May 30, 2007
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
H01L21/316; C23C16/42
Domestic Patent References:
| JPH10154706A | 1998-06-09 | |||
| JP2000311893A | 2000-11-07 | |||
| JPH0982696A | 1997-03-28 | |||
| JPH10321619A | 1998-12-04 | |||
| JPH09260369A | 1997-10-03 | |||
| JPH09251997A | 1997-09-22 | |||
| JP2001077105A | 2001-03-23 | |||
| JP2001148382A | 2001-05-29 |
Foreign References:
| WO1992012535A1 | 1992-07-23 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yuichi Yamada
Ikeda adult
Yuichi Yamada
Ikeda adult