PURPOSE: To obtain a chip-type semiconductor porcelain capacitor which has no or little exposure of the glass component of an insulating layer on burned metal films which serve as edge electrodes by using a glass insulating layer whose glass component is softened or melted at the higher temperature than the glass frit contained in the edge electrodes.

CONSTITUTION: Metal paste is applied to the front and rear principal planes of a semiconductor porcelain base substance 10 and is burned to be electrodes 11 which face each other. Each of the facing electrodes 11 is formed on each principal plane with the specified distance left over from each end face 10a. The distance left over is equal to the thickness of the semiconductor porcelain base substance 10 or more than that. On almost all the front and rear principal planes and on side faces 10b of the semiconductor porcelain base substance 10, in other words, on almost all the surface of the semiconductor porcelain base substance 10 except for the end faces 10a, an insulating glass layer 12 is formed. And edge electrodes 15 are so formed as to cover the end faces 10a and parts of the facing electrodes 11 which are exposed on the front and rear surfaces near the end faces 10a which face each other. Since the insulating glass layer 12 which is formed on the front and rear surfaces and on both side faces 10b of the semiconductor porcelain base substance 10 is softened and melted at the higher temperature than the glass frit contained in the edge electrodes 15, the insulating glass layer 12 can be formed at the higher buring temperature than the edge electrodes 15.