To improve both cleanability and flatness of a semiconductor substrate.
An ozone water is supplied to a semiconductor substrate after finish processed. Consequently, an organic substance on a surface of the substrate is dissolved and removed and also an oxide film is formed on the surface of the substrate. Next, the surface of the substrate is cleaned by brush scrubbing to remove large diameters of particles thereon. Further, an HF aqueous solution is supplied onto the surface of the substrate, and the oxide film is etched to remove metallic foreign matters and particles in or on the oxide film. And after a cleaning step with use of the HF aqueous solution and before the surface of the substrate is contaminated by the air, a cleaning solution of hydrophilization is supplied onto the surface of the substrate to form an oxide film on the substrate surface. Thereafter, the surface of the substrate is dried and the cleaning step of the substrate is completed.
GOMI KENICHI
HAJI SHIHOKO
