To obtain a CMP(chemical mechanical polishing) abrasive being readily subjected to waste liquor treatment, capable of polishing a face to be polished such as a silicon oxide film at a high speed without a scratch, having the ratio of the polishing rate of the silicon oxide film to the polishing rate of a silicon nitride film of ≥10, and a method for polishing a substrate using the CMP abrasive.
This CMP abrasive comprises a cerium oxide particle, a dispersant, an additive having biodegradability and water. A CMP abrasive comprises the additive having biodegradability which is a water-soluble polyester or its derivative. A CMP abrasive comprises a cerium oxide slurry containing a cerium oxide particle, a dispersant and water and an additive solution containing an additive having biodegradability and water. The method for polishing a substrate comprises pressing the substrate having formed a polishing film against a polishing cloth of a polishing fixed plate, pressurizing the polishing cloth and relatively moving the substrate from the polishing fixed plate and polishing the film to be polished while supplying the CMP abrasive between the film to be polished and the polishing cloth.
ASHIZAWA TORANOSUKE
YOSHIDA MASATO
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