To provide a simply processed and inexpensive cold electron emission element and its manufacturing method in which the response of an electron emission from an emitter against a field-effect transistor(FET) is made in a high speed, and suppress dispersions of emitted amount of electrons from each of the emitter in the case emitters are plural.
This consists of a semiconductor layer 2 having grown up on a substrate 1, of an insulating layer and the field-effect transistor(FET), deposited on the growing surface, of one or plural emitters 10 which are obtained by etching either one side region of this FET source or a drain region or the part of semiconductor layer 2 which is adjacent to this region, and of a low resistor layer 15 formed at a lower part of the emitter.
NORIKANE TETSUYA
HIRANAKA KOICHI
WADA NAOKI
HORI JUNICHI
