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Title:
ELECTRIC FIELD EMISSION ARRAY UTILIZING CARBON NANOTUBE AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2001357773
Kind Code:
A
Abstract:

To provide an electric field emission array and its manufacturing method, which utilize a carbon nanotube and which can take the place of an existing microchip as an electron emitting source.

In the field emission array and the manufacturing method utilizing the carbon nanotube 11', a rear face substrate structural body 100 is formed including a negative electrode 11 and the carbon nanotube 11' formed on a rear face substrate in strip-shapes, a positive electrode 21 and a fluorescent substance 22 are sequentially formed on a front face substrate 20 in stripe- shapes, holes are formed on a non-conductive plate 23, and after a front face substrate structural body 200 is formed via a spacer 25 in order to retain a predetermined distance between the non-conductive plate 23 and the front face substrate 20 by forming stripe-shaped gates having openings corresponding to these holes, a stage is included that the rear face substrate structural body 100 and the front face substrate structural body 200 are joined in order that the gate and the carbon nanotube 11' have the predetermined distance by the carbon nanotubes 11' entering into the holes.


Inventors:
CHOI WON-BONG
YUN MIN-JAE
JIN YONG-WAN
Application Number:
JP2001124604A
Publication Date:
December 26, 2001
Filing Date:
April 23, 2001
Export Citation:
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Assignee:
SAMSUNG SDI CO LTD
International Classes:
H01J9/24; H01J1/304; H01J3/02; H01J5/03; H01J9/02; H01J29/04; H01J29/87; H01J31/12; (IPC1-7): H01J1/304; H01J5/03; H01J9/02; H01J9/24; H01J29/04; H01J29/87; H01J31/12
Domestic Patent References:
JP2000086219A2000-03-28
JPH05507580A1993-10-28
JPH10149760A1998-06-02
JPH04264337A1992-09-21
JPH09504642A1997-05-06
Foreign References:
WO1999005692A11999-02-04
Attorney, Agent or Firm:
Dozo Isono