COMPOUND SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

Title:

COMPOUND SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

Document Type and Number:

Japanese Patent JP3257034

Kind Code:

B2

Abstract:

PURPOSE: To enable containment of carrier by one crystal formation in a compound semiconductor device containing phosphorus.
CONSTITUTION: A main surface is of a compound semiconductor substrate 1 is composed of a surface tilted in <100> crystallographic axis direction from {001} crystal surface and a ridge 2 or a groove extending in a direction along <110> crystallographic axis direction is provided on the main surface is. A compound semiconductor layer 10 is epitaxially formed on the compound semiconductor substrate 1 and at least a part of the compound semiconductor layer 10 is constituted of a semiconductor material containing phosphorus. A function layer (an active layer 5) having at least {111} B crystal face is provided to the compound semiconductor layer 10.

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Inventors:

Etsuo Morita
Shigetaka Tomiya
Nao Yamamoto
Akira Ishibashi

Application Number:

JP14284292A

Publication Date:

February 18, 2002

Filing Date:

June 03, 1992

Export Citation:

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Assignee:

ソニー株式会社

International Classes:

H01L21/205; B82Y10/00; B82Y20/00; B82Y40/00; H01L29/06; H01L29/80; H01S5/00; H01S5/22; H01S5/223; H01S5/323; H01S5/32; (IPC1-7): H01L21/205; H01L29/80; H01S5/22

Domestic Patent References:

JP294686A
JP5316590A
JP2168690A
JP1315184A
JP479312A
JP191485A

Other References:

【文献】第51回応用物理学会学術講演予稿集,27a-SX-14
【文献】第53回応用物理学会学術講演予稿集,18p-ZE-15

Attorney, Agent or Firm:

Hidemori Matsukuma

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