Title:
COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP3685838
Kind Code:
B2
Abstract:
PURPOSE: To improve the productivity while forming a flat semiconductor film in relation to the title compound semiconductor device including wultzite structure compound semiconductors.
CONSTITUTION: The title compound semiconductor device is composed of a semiconductor substrate 11 in cubic system crystalline structure, a cubic system semiconductor layer 12 formed on a main surface of the semiconductor substrate 11 and wultzite structure crystalline semiconductors 13-16 in the same group as that of the cubic system semiconductor layer 12 formed on said layer 12.
Inventors:
Kazuhiko Horino
Application Number:
JP14610195A
Publication Date:
August 24, 2005
Filing Date:
June 13, 1995
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L21/20; H01L33/10; H01L33/12; H01L33/16; H01L33/32; H01L33/34; H01S5/00; H01S5/323; (IPC1-7): H01L33/00; H01L21/20; H01S5/323
Domestic Patent References:
| JP2275682A | ||||
| JP4242985A | ||||
| JP2288371A | ||||
| JP63116485A |
Attorney, Agent or Firm:
Keizo Okamoto
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