To control electrostatic capacity seen as the desired dielectric layer of a dielectric element and the insulation properties seen desired dielectric layer of the element as a whole by a method, wherein the dielectric layer is formed into a laminated structure consisting of dielectric materials having more than two kinds of different specific dielectric constants, and the film thicknesses of the layers of the dielectric materials constituting the laminated structure are adjusted.

A lower conductor layer 4 is formed and thereafter, as a substrate 1 is in a state in which it is installed in a vacuum without exposing the substrate 1 to the atmosphere, an Al2O3 layer 5 is successively deposited with an electron beam, and moreover a TiO2 layer 6 is deposited with an electron beam to form a dielectric layer, which consists of a dielectric material consisting of the layer 5 and a dielectric material consisting of the layer 6. Here, the specific dielectric constant of the layer 5 is r=9, the specific dielectric constant of the layer 6 is v=86, and the specific dielectric constants of the layer 5 and 6 are different from each other. As a result of this, a plurality of the dielectric materials having the different specific dielectric constants are laminated, and the respective film thicknesses of the layers 5 and 6 of the dielectric materials are adjusted, whereby it becomes possible to control the electrostatic capacity of a dielectric element and leakage current in the element, without making the overall film thickness of the dielectric layer form so large.