Title:
CONTROLLING METHOD FOR ION ENERGY AND ITS DEVICE
Document Type and Number:
Japanese Patent JP3140248
Kind Code:
B2
Abstract:
PURPOSE: To eliminate the need for applying an external bias voltage to a treated material and to reduce production costs by controlling an electron beam incident angle to the treated material or incident ion energy.
CONSTITUTION: Ions in a plasma emitted in an ion chamber 12c collide with a treated material 22 supported by a supporting device 24 for a treatment such as etching. Where, control is made to adjust ion energy incoming to the material 22 by turning the device 24 to change the angle between electron beams and the surface of the material 22 from vertical to horizontal. The ion energy incoming to the material 22 is also controlled by controlling an acceleration power supply 30 to adjust the acceleration Va of the electron beams. Namely, insulating support to the material 22 by means of the device 24 applies a negative bias to the material 22 under a normal state due to the difference between the electron beams and the ions in diffusion coefft. Thus, the problem such as turbulent plasma due to the external bias voltage is solved.
Inventors:
Manabu Hamagaki
Tamio Hara
Tamio Hara
Application Number:
JP7530393A
Publication Date:
March 05, 2001
Filing Date:
March 09, 1993
Export Citation:
Assignee:
RIKEN
International Classes:
H05H1/00; H05H1/24; H05H1/46; H05H5/00; (IPC1-7): H05H1/24; H05H1/46
Domestic Patent References:
| JP63190300A | ||||
| JP5239631A |
Attorney, Agent or Firm:
Junichi Ueshima