To provide a new copolymer to be used for preparing resists useful for microprocessing using various kinds of radiations, and to provide a resist composition containing the copolymer.
The new copolymer is represented by chemical formula(1)[ wherein, R1, R2 and R3 are independent of each other, R1 is H, a 1-18C alkyl, 3-18C cycloalkyl, 2-18C alkoxyalkyl or 3-18C cycloalkoxy, and R2 and R3 are each H and a (ether group-, ester group-, carbonyl group-, acetal group-, epoxy group-, nitrile group- or aldehyde group-containing) 1-30C alkyl; R4 and R5 are each H or methyl; X is an olefin compound group, being a norbornene derivative or trivalent olefin derivative group containing no side chain structure in the recurring units 1 or having another side chain structure except the R1-bearing side chain structure; and l, m, n and o are each the number of the recurring units in the main chain, meeting the following requirements: (l+m+n+o)=1, 0.1<l/(l+m+n+o)<0.8, 0.1<m/(l+m+n+o)<0.7, 0≤n/(l+m+n+o)<0.7, and 0≤o/(l+m+n+o)<0.5 ].
PARK JOO-HYEON
SEO DONG-CHUL
LIM YOUNG-TAEK
CHO SEONG-DUK
SONG JI-YOUNG
KIM KYOUNG-MUN
Kazuko Fujita
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