Title:
フォトレジスト用共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、及び半導体素子
Document Type and Number:
Japanese Patent JP3587770
Kind Code:
B2
Abstract:
The present invention discloses photoresist polymers and photoresist compositions containing the same. The photoresist polymer comprises repeating units derived from (a) a compound of Chemical Formula 1; (b) a compound of Chemical Formula 2; (c) a compound of Chemical Formula 3; and optionally (d) maleic anhydride. Photoresist compositions containing the polymers of the present invention have superior etching resistance, heat resistance and adhesiveness, are easily developed in the 2.38% aqueous TMAH solution, and are therefore suitable for lithography processes using ultraviolet light sources when fabricating a minute circuit of a high integration semiconductor device:wherein R, R*, R3, R4, R', R'', R''', X, Y, V, W, i and j are as described herein.
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Inventors:
High dimension
Lee Nemori
Chung Zhao Chang
Kim Ming-soo
Lee Nemori
Chung Zhao Chang
Kim Ming-soo
Application Number:
JP2000231615A
Publication Date:
November 10, 2004
Filing Date:
July 31, 2000
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
C08F2/02; C08F2/06; C08F232/08; C08K5/00; C08L45/00; G03F7/039; G03F7/075; G03F7/38; G03F7/40; H01L21/027; (IPC1-7): C08F232/08; C08F2/02; C08F2/06; C08K5/00; C08L45/00; G03F7/039; G03F7/075; G03F7/38; G03F7/40; H01L21/027
Domestic Patent References:
| JP11218918A | ||||
| JP10198035A | ||||
| JP2170809A | ||||
| JP2000086726A | ||||
| JP2001015427A |
Attorney, Agent or Firm:
Hiroshi Arafune
Yoshio Arafune
Yoshio Arafune