Title:
CRUCIBLE FOR GROWING COMPOUND SEMICONDUCTOR SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPS5692194
Kind Code:
A
Abstract:
PURPOSE:To provide a titled crucible which consists in forming the bore of a melt containing part smaller than the bore of a liquid capsule containing part above this and which covers the growing crystal with the capsule along with the lowering liquid level owing to the growth of the pulling up crystal and prevents polycrystallization on account of rapid heat radiation. CONSTITUTION:GaP11 is used for a compound semiconductor device and B2O3 10 for a capsule agent. The section 8 occupied by the upper part B2O3 10 is formed larger in bore than the section 9 occupied by the lower part GaP11 of the quartz crucible melting both of these. As a result, even if an equal amount of the B2O3 10 is used, the B2O3 layer may be made thinner than that when a conventional crucible is used. Even more, along with the gradual growth of the crystal which is being pulled up, the B2O3 10 of the same volume as the lowering of the liquid level automatically covers the growing crystal, thereby suppressing rapid heat radiation and considerably decreasing large diametral fluctuations and polycrystallization.
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Inventors:
USHIZAWA JISABUROU
Application Number:
JP16681479A
Publication Date:
July 25, 1981
Filing Date:
December 24, 1979
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
C30B27/02; C30B15/10; H01L21/02; H01L21/208; (IPC1-7): C30B15/10; H01L21/02