CRYSTALLINE THIN FILM, METHOD OF FORMING THE SAME, SEMICONDUCTOR DEVICE THEREOF, AND DISPLAY DEVICE

Japanese Patent JP2005347580

A

To provide a high-quality crystalline thin film which does not include a crystal boundary in a desired area.

Surrounding an amorphous silicon thin film 4 comprising a thin wire 5 patterned on a substrate 1, thin films are formed 6 which are in the state of an island separated from the amorphous silicon thin film 4 and which are made of the same material as the amorphous silicon thin film 4. The amorphous silicon thin film 4 is irradiated repeatedly with a pulse laser beam in the state of setting to make movement per once laser beam irradiation to be shorter than the length of the crystal growth in a horizontal direction of the amorphous silicon thin film 4 by once irradiation, and is irradiated repeatedly while moving the pulse laser beam nearly in parallel to the longitudinal direction of the thin wire 5. In this case, satisfactory melting condition is obtained to any pattern of various kinds of shapes and sizes on the same laser beam irradiation condition.

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MIYAJIMA TOSHIAKI
NAKAMURA YOSHINOBU

JP2004166385A

December 15, 2005

June 03, 2004

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H01L21/20; H01L21/336; H01L29/786; H01L29/861; (IPC1-7): H01L21/20; H01L21/336; H01L29/786; H01L29/861

Hidesaku Yamamoto
Takaaki Yasumura
Takeshi Oshio

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