To provide a cutting blade capable of preventing generation of burr when cutting a semiconductor plate along a cutting line and being easily manufactured.
In this cutting blade 43, an annular cutting edge part is made of an electrocast abrasive layer fixing abrasive grain by plating. The annular cutting edge part is made of a center electrocast abrasive grain layer 431 and an outside electrocast abrasive grain layer 432 formed on both sides of the center electrocast abrasive grain layer 431. The center electrocast abrasive grain layer 431 is formed by an abrasive grain layer with a low concentration degree. The outside electrocast abrasive grain layer 432 is formed by an abrasive grain layer with a higher concentration degree than that of the center electrocast abrasive grain layer 431.
JP2012129323 | BASE MATERIAL PROCESSING METHOD |
JPH01211925 | CLEANING OF SEMICONDUCTOR SUBSTRATE |
JPH06333892 | ELECTRONIC DEVICE |
JPH01121176A | 1989-05-12 | |||
JPS63147264A | 1988-06-20 |