To provide a cutting device for a single crystal substrate that can cut a single crystal substrate without generating cracks or chips on the cut plane and does not cause large damage to the single crystal substrate when cutting, and a method for cutting the single crystal substrate.
A laser beam LR is irradiated from a laser light source 12 up to an outer region beyond a machining width t1 of the cutting line 25. The irradiation width t2 of the laser beam LR is so set that it is broader than the machining width t1 of the cutting line 25. In other words, the laser beam LR obliquely radiates the semiconductor chip 20 up to the end of the formation region of the semiconductor chip exceeding the edge pf the cutting line 25. By this, the single crystal forms a reformed area Sn where the single crystal is formed into a polycrystal or an amorphous crystal, and the reformed area is cut by a blade 11.
KITAHARA TAKU
| JP2002222777A | 2002-08-09 | |||
| JP2004351477A | 2004-12-16 | |||
| JP2008147412A | 2008-06-26 | |||
| JP2005252196A | 2005-09-15 | |||
| JP2006310774A | 2006-11-09 |
Tadashi Takahashi
Takashi Watanabe
Suzuki Mitsuyoshi
Kazuya Nishi
Yasuhiko Murayama
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