Title:
不揮発性メモリ装置のデータ書き込み方法
Document Type and Number:
Japanese Patent JP4427560
Kind Code:
B2
Abstract:
A method of programming a non-volatile memory device with memory cells formed of variable resistance elements and disposed between word lines and bit lines, includes: previously charging a selected word line and a selected bit line together with a non-selected word line and a non-selected bit line up to a certain voltage; and further charging the selected word line and the non-selected bit line up to a program voltage higher than the certain voltage and a program-block voltage, respectively, and simultaneously discharging the selected bit line.
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Inventors:
Takuya Niyama
Koji Hosono
Toshiaki Edahiro
Naoki Tokiwa
Kazumi Kanda
Shigeo Oshima
Koji Hosono
Toshiaki Edahiro
Naoki Tokiwa
Kazumi Kanda
Shigeo Oshima
Application Number:
JP2007133586A
Publication Date:
March 10, 2010
Filing Date:
May 21, 2007
Export Citation:
Assignee:
Toshiba Corporation
Toshiba Memory Systems Co., Ltd.
Toshiba Memory Systems Co., Ltd.
International Classes:
G11C13/00
Domestic Patent References:
| JP2007073176A |
Attorney, Agent or Firm:
Masaru Itami
Kazuhiko Tamura
Kazuhiko Tamura