PURPOSE: To uniformize the thickness and quality of a film and to increase the productivity of the film by providing a magnetic field generating means on the back of a cathode provided with a couple of targets to focus plasma, and connecting a power source to the cathode and a substrate holder.

CONSTITUTION: The magnetic field generating means 81 and 82 are provided on the backs of the cathodes 31 and 32 furnished with a couple of targets 21 and 22 opposed to each other in a vacuum vessel 11, and the plasma is focused. The substrate holders 51 and 52 provided with substrates 41 and 42 are furnished and opposed to the space formed between the targets 21 and 22. The power source 70 is connected to the cathodes 31 and 32 and the substrate holders 51 and 52, matching devices 61, 62, 63 and 64 are adjusted, and sputtering power is supplied. By this method, a uniform vapor-deposited film can be formed over a large area.