To provide an inorganic compound film (a gas barrier film) with low moisture vapor transmissivity or the like and a good gas barrier property, and a gas barrier film having the inorganic compound film, and provide deposition source material for obtaining the inorganic compound film and a film forming method using the deposition source material.

The above problem is solved by the deposition source material which includes film forming raw material evaporating in receiving energy and porus material holding a cation for facilitating evaporation of the film forming material in a hole, wherein the film forming raw material is the inorganic compound. At that time, an ion is a monovalent cation of such as an alkali metal ion and ammonium ion of such as a sodium ion and potassium ion. The porus material is zeolite expressed by Me2/xO Al2O3 mSiO2 nH2O (Me is a cation of X valence). An ion is preferably held in one hole of one crystal lattice of the zeolite.