Title:
【発明の名称】レジスト膜の除去方法及び半導体装置の製造方法
Document Type and Number:
Japanese Patent JP3076270
Kind Code:
B2
Abstract:
This invention concerns a method for the removal of a resist film containing phosphorus (P) or boron (B) or other inorganic element. Specifically, a resist film 42 formed on a substrate 41 is exposed to the liquid or gas of chlorosulfonic acid [SO2Cl(OH)] and caused to react with the acid and, consequently, is enabled to be removed from the substrate 41.
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Inventors:
Toshio Kato
Tokumasu Toku
Tokumasu Toku
Application Number:
JP16703897A
Publication Date:
August 14, 2000
Filing Date:
June 24, 1997
Export Citation:
Assignee:
Canon Sales Inc.
Semiconductor Process Laboratory Co., Ltd.
Semiconductor Process Laboratory Co., Ltd.
International Classes:
G03F7/42; H01L21/027; H01L21/306; H01L21/308; (IPC1-7): H01L21/308; G03F7/42; H01L21/027; H01L21/306
Domestic Patent References:
| JP475323A | ||||
| JP5304089A | ||||
| JP8162403A |
Attorney, Agent or Firm:
Keizo Okamoto