Title:
フォトレジストポリマー除去用洗浄剤組成物及びフォトレジストパターン洗浄方法
Document Type and Number:
Japanese Patent JP4263995
Kind Code:
B2
Abstract:
A photoresist polymer remover composition for removing photoresist residuals generated from etching or ashing sub-processes. The disclosed photoresist polymer remover composition includes: (a) 5% to 15% of sulfuric acid based on the total weight of said composition, (b) 1% to 5% of hydrogen peroxide or 0.0001% to 0.05% of ozone based on the total weight of said composition, (c) 0.1% to 5% of acetic acid based on the total weight of said composition, (d) 0.0001% to 0.5% of ammonium fluoride based on the total weight of said composition and (e) remaining amount of water.
Inventors:
Park
Lee Chang-ho
Cho Sanei
Gold
Youn Tin Ji
Lee Chang-ho
Cho Sanei
Gold
Youn Tin Ji
Application Number:
JP2003430047A
Publication Date:
May 13, 2009
Filing Date:
December 25, 2003
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
C11D7/08; G03F7/42; C09D9/00; C11D7/10; C11D7/18; C11D7/26; G03F7/004; G03F7/32; H01L21/02; H01L21/027; H01L21/304; H01L21/3065
Domestic Patent References:
| JP2004310052A | ||||
| JP2000508082A |
Attorney, Agent or Firm:
Hiroshi Arafune
Yoshio Arafune
Yoshio Arafune