To provide a developing method for immersion lithography for obtaining an electronic device that eliminates a development defect, achieving a process that is simple and reduced cost and enables high repellency sufficient to allow high-speed scanning, and to provide the developing method for immersion lithography by a developing method improved by inexpensive material without introducing any new facility.
The developing method for immersion lithography of an electronic device including the step of development with alkali immersion is characterized by a dissolving and removing step ST5-6, conducted using a dissolving and removing solution that selectively dissolves and removes a surface segregation agent of a resist containing the surface segregation agent and chemically-amplified resist.
HAGIWARA TAKUYA
ISHIBASHI TAKEO
JP2008260931A | 2008-10-30 | |||
JP2008309257A | 2008-12-25 | |||
JP2008112123A | 2008-05-15 | |||
JP2007148167A | 2007-06-14 | |||
JP2006309245A | 2006-11-09 | |||
JP2007241270A | 2007-09-20 | |||
JP2007219152A | 2007-08-30 | |||
JP2008032758A | 2008-02-14 | |||
JP2008260931A | 2008-10-30 | |||
JP2008309257A | 2008-12-25 | |||
JP2008112123A | 2008-05-15 | |||
JP2007148167A | 2007-06-14 | |||
JP2006309245A | 2006-11-09 |
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai
Nobuo Arakawa
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