Title:
DEVELOPMENT DEVICE, SUBSTRATE TREATER, AND DEVELOPMENT METHOD
Document Type and Number:
Japanese Patent JP3679695
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To raise the equality of treatment, in the case of development treatment to a board, for example, a wafer.
SOLUTION: A current plate 6 is arranged above a wafer holder 2 to hold a wafer W, and the roof 62 and the bottom plate 63 of this plate 6 are positioned so that each circulation port 62a and 63a may lie over the other in vertical direction, and a developer D is heaped upon the surface of the wafer. Then, the bottom plate 63 of the plate 6 is slid laterally so that the said circulation ports 62a and 63a may not lie upon the other in vertical direction, prior to development. By doing it this way, at development, the circulation ports 62a and 63a of the plate 6 are blocked in vertical direction, which intercept the air current to the wafer W, so the occurrence of the temperature distribution of the developer D within the surface of the wafer W, which is caused by the flow of the air to the wafer W, is suppressed, and the occurrence of the unevenness in development caused by temperature difference is suppressed, and equal development treatment can be performed.
Inventors:
Yuji Matsuyama
Masahito Hamada
Masahito Hamada
Application Number:
JP2000242808A
Publication Date:
August 03, 2005
Filing Date:
August 10, 2000
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
G03F7/30; H01L21/027; (IPC1-7): H01L21/027; G03F7/30
Domestic Patent References:
| JP59217329A | ||||
| JP9106934A | ||||
| JP10022199A | ||||
| JP9148226A | ||||
| JP4074413A | ||||
| JP3119472U | ||||
| JP9097757A |
Attorney, Agent or Firm:
Toshio Inoue
Mizuno Hiromi
Mizuno Hiromi