Title:
DEVICE FOR FORMING THIN FILM
Document Type and Number:
Japanese Patent JPS58157128
Kind Code:
A
Abstract:
PURPOSE:To form thin film with high reproducibility by plasma CVD by a method wherein the ratio of the voltage applied to a vacuum vessel against the degree of vacuum is kept constant by simultaneously regulating the high frequency voltage and vacuum systems to attain stable electron temperatures. CONSTITUTION:A reactive gas 4 is introduced into a vacuum bell jar 1 for the formation of a thin film. A high frequency voltage by a high frequency oscillator 6 is applied across an upper electrode 5 and lower electrode 2. The high frequency voltage is measured by a voltmeter 10 and the degree of vacuum is measured by a vacuum meter 8. The measurement data are supplied to a microcomputer 11. The high frequency oscillator 6 and an automatic pressure controller 9 are so regulated that the ratio of the applied voltage (electric field) against the degree of vacuum remains constant.
Inventors:
TAKEDA TOSHIFUMI
Application Number:
JP3954782A
Publication Date:
September 19, 1983
Filing Date:
March 15, 1982
Export Citation:
Assignee:
HITACHI LTD
International Classes:
C23C16/52; H01L21/205; H01L21/302; H01L21/3065; (IPC1-7): H01L21/302
Attorney, Agent or Firm:
Toshiyuki Usuda (2 outside)