To provide a device and a method of inspecting a failure of the charged particle beam capable of performing the focused clear observation and the accurate failure inspection even in the case of using a charged up sample by automatically correcting a displacement of the focal point position due to the charge up generated in the sample as an object of observation.

A main control system 34 previously forms the voltage map indicating the quantity of the focal point displacement of the secondary electron beam B2 in a detecting surface of an electron beam detecting unit 30 in response to the quantity of the charge up generated when a sample 4 is irradiated with the primary electron beam B1, and stores this voltage map in a memory device 43. The main control system 34 reads out the voltage map stored in the memory device 43 when observing the sample 4, and controls the voltage to be applied to a secondary optical system 20 or the voltage to be applied to the sample 4 so as to correct the focal point position of the secondary beam B2.